X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition

Abstract

Yttrium aluminium garnet thin films doped with neodymium have been prepared by Pulsed Laser Deposition method on (111)-oriented Si substrates. The substrate was heated up to temperature in the range between 200 and 600 degrees C. Obtained films were then characterized both by x-ray diffraction method using Siemens D5000 diffracto-meter and radioluminescence spectroscopy.