Memristor applied in delay locked loop for high lock speed and wide frequency range

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI:10.1109/SMELEC.2014.6920870

Siti Musliha Ajmal Binti Mokhtar, W. Abdullah

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Abstract

Locking speed and operating frequency range of DLL is limited to the delays of its VCDL. Since memristor resistance changes according to external bias, memristor can be used as programmable resistor. In this paper, memristor is applied to VCDL as variable resistor where the memristor resistance regulates total delay of the VCDL. VCDL consists of current starved inverter as the delay unit. A voltage to current converter (VCC) is used to convert control voltage from capacitor, Vc to control current, Ic. The control current, Ic with memristor resistance generates new voltage, Vr that regulates the delay. Compared to conventional DLL, the proposed DLL design offers one more control parameter which is Vr. By applying memristor to the DLL, the control voltage Vc can be further manipulated. Simulation results show that proposed DLL with memristor has higher locking speed and can lock higher input frequency compared to conventional DLL without memristor. Therefore, higher locking speed and wide operating frequency range are both achievable by proposed DLL with memristor.

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忆阻器应用于延时锁相环，锁相速度快，频率范围宽

DLL的锁定速度和工作频率范围受限于其VCDL的延迟。由于忆阻器的电阻随外部偏置的变化而变化，因此忆阻器可以用作可编程电阻。本文将忆阻器作为可变电阻应用于VCDL中，由忆阻电阻调节VCDL的总延时。VCDL由缺流逆变器作为延时单元组成。电压电流变换器(VCC)用于将控制电压从电容器Vc转换为控制电流Ic，控制电流Ic与忆阻电阻产生新的电压Vr来调节延迟。与传统的动态链接库相比，本文提出的动态链接库设计增加了一个控制参数，即虚拟现实。通过在DLL中加入忆阻器，可以进一步控制电压Vc。仿真结果表明，与不带忆阻器的DLL相比，带忆阻器的DLL具有更高的锁定速度和更高的锁定频率。因此，基于忆阻器的动态动态链接可以实现更高的锁定速度和更宽的工作频率范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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