Switching Trajectory Control of SiC MOSFET Based on I—V Characteristics Using Digital Active Gate Driver

Abstract

In this work, we investigate a control strategy for the digital active gate drive of silicon carbide (SiC) MOSFETs to select the crucial gate signal for improving the switching characteristics. The strategy is developed on the state space of the SiC MOSFET, utilizing its current-voltage characteristics obtained from a device model. The proposed gate driver and the strategy are verified for both turn-on and turn-off operation in a double-pulse testing. Experimental results confirm that the overshoot and ringing of the drain current and drain-source voltage is successively suppressed in wide operating conditions by selecting appropriate gate signal sequences.