Flexible RRAM with Natural Gelatin Exhibiting High Current On/Off Ratio and Retention

Abstract

Natural protein Gelatin is explored as a promising insulating layer for demonstration of high performance flexible electrochemical metallization type resistive random-access memory (RRAM) devices. The fabricated flexible RRAM devices exhibited excellent switching behaviour with very high current on/off ratio of greater than 105 and data retention time of higher than 104 s without any obvious degradation in the memory performance. These results indicate that natural materials have potential to be used for high performance devices for eco-sustainable electronics.