A tapered cascaded multi-stage distributed amplifier with 370GHz GBW in 90nm CMOS

A. Arbabian, A. Niknejad
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引用次数: 32

Abstract

A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.
90nm CMOS中370GHz GBW的锥形级联多级分布式放大器
采用90 nm数字CMOS工艺设计并制作了一种锥形级联多级分布式放大器(T-CMSDA)。该放大器实现了73.5 GHz的3db带宽和14db的通带增益。这导致370 GHz的增益带宽(GBW)产品。实现的零dB BW为83.5 GHz,在77 GHz和94 GHz范围内的输入和输出匹配度均优于-9 dB。该芯片消耗1.5 mm × 1.15 mm的面积,同时从1.2 V电源提取70 mA。
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