A 200dB Dynamic Range Iris-less CMOS Image Sensor with Lateral Overflow Integration Capacitor using Hybrid Voltage and Current Readout Operation

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696161

N. Akahane, Rie Ryuzaki, S. Adachi, K. Mizobuchi, S. Sugawa

引用次数: 47

Abstract

A 2.6times2.6mm² image sensor fabricated in 0.35mum 2P3M CMOS contains 64times64 pixels with 20times20mum² pixel size and has an extended dynamic range of over 200dB. This DR is equivalent to the incident light ranging from about 10^-2 to 10⁸ lx with the lens iris fixed

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采用电压和电流混合读出操作的横向溢流集成电容的200dB动态范围无虹膜CMOS图像传感器

在0.35 μ m 2P3M CMOS中制造的2.6 × 2.6mm2图像传感器包含64times64像素，像素尺寸为20times20mum2，具有超过200dB的扩展动态范围。该DR相当于在固定光圈的情况下，入射光的范围约为10-2至108 lx

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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