Soft error immune latch under SEU related double-node charge collection

K. Katsarou, Y. Tsiatouhas
{"title":"Soft error immune latch under SEU related double-node charge collection","authors":"K. Katsarou, Y. Tsiatouhas","doi":"10.1109/IOLTS.2015.7229830","DOIUrl":null,"url":null,"abstract":"The susceptibility of memory elements (latches, flip-flops) to soft errors is increased as CMOS technology scales down, due to multi-node charge collection by the impact of energetic particles on silicon. Existing design solutions provide partial or no immunity to SEUs that affect a pair of nodes. In this work, we propose a new latch topology, which provides complete protection from SEU related double node charge sharing. Simulations results and comparisons on a variety of SEU tolerant techniques are presented to evaluate the efficiency of the proposed latch.","PeriodicalId":413023,"journal":{"name":"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2015.7229830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

The susceptibility of memory elements (latches, flip-flops) to soft errors is increased as CMOS technology scales down, due to multi-node charge collection by the impact of energetic particles on silicon. Existing design solutions provide partial or no immunity to SEUs that affect a pair of nodes. In this work, we propose a new latch topology, which provides complete protection from SEU related double node charge sharing. Simulations results and comparisons on a variety of SEU tolerant techniques are presented to evaluate the efficiency of the proposed latch.
双节点电荷收集下的软误差免疫锁存
存储元件(锁存器、触发器)对软误差的敏感性随着CMOS技术的缩小而增加,这是由于高能粒子对硅的影响而产生的多节点电荷收集。现有的设计解决方案对影响一对节点的seu提供部分免疫或不提供免疫。在这项工作中,我们提出了一种新的锁存器拓扑,它提供了完整的保护,从SEU相关的双节点电荷共享。仿真结果和比较了各种容忍SEU的技术,以评估所提出的锁存器的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信