A 60GHz transmitter in 0.18\mu m Silicon Germanium

M. Boers, A. Parker, N. Weste
{"title":"A 60GHz transmitter in 0.18\\mu m Silicon Germanium","authors":"M. Boers, A. Parker, N. Weste","doi":"10.1109/AUSWIRELESS.2007.4","DOIUrl":null,"url":null,"abstract":"Simulated results for a silicon germanium transmitter operating at 60 GHz are presented. The super-heterodyne transmitter is based on a moving IF architecture with two up-conversion stages. The transmitter includes a baseband to 12 GHz image- reject mixer, a 12 to 60 GHz Gilbert-cell mixer, a passive balun and a power amplifier capable of greater than 13 dBm saturated output power. All bias voltages are tuneable using a 3-wire serial interface connected to 4-bit DAC's. Also on-chip is a frequency synthesizer that supplies the LO to both mixers and locks the on-chip 24 GHz VCO to an external source.","PeriodicalId":312921,"journal":{"name":"The 2nd International Conference on Wireless Broadband and Ultra Wideband Communications (AusWireless 2007)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2nd International Conference on Wireless Broadband and Ultra Wideband Communications (AusWireless 2007)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AUSWIRELESS.2007.4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Simulated results for a silicon germanium transmitter operating at 60 GHz are presented. The super-heterodyne transmitter is based on a moving IF architecture with two up-conversion stages. The transmitter includes a baseband to 12 GHz image- reject mixer, a 12 to 60 GHz Gilbert-cell mixer, a passive balun and a power amplifier capable of greater than 13 dBm saturated output power. All bias voltages are tuneable using a 3-wire serial interface connected to 4-bit DAC's. Also on-chip is a frequency synthesizer that supplies the LO to both mixers and locks the on-chip 24 GHz VCO to an external source.
60GHz发射机,0.18 μ m硅锗
给出了工作频率为60 GHz的硅锗发射机的仿真结果。超外差发射机基于带有两个上转换级的移动中频架构。发射机包括一个基带至12 GHz图像抑制混频器,一个12至60 GHz吉尔伯特单元混频器,一个无源平衡器和一个功率放大器,其饱和输出功率大于13 dBm。使用连接到4位DAC的3线串行接口可调谐所有偏置电压。片上还有一个频率合成器,为两个混频器提供LO,并将片上24 GHz VCO锁定到外部源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信