{"title":"Hydrogen Sensor Based on Pentacene Organic Thin-Film Transistor for Flexible Applications","authors":"Bochang Li, P. Lai, W. Tang","doi":"10.1109/EDSSC.2018.8487082","DOIUrl":null,"url":null,"abstract":"A flexible hydrogen gas sensor based on pentacene organic thin-film transistor (OTFT) using palladium (Pd) source and drain (S/D) electrodes as the sensing medium is prepared on adhesive vacuum tape. The sensor exhibits a clear, rapid and concentration-dependent response upon hydrogen exposure without the need of heating. In addition, in order to demonstrate the flexibility of the sensor, measurements on a curved surface are performed. The sensor, when attached to the curved surface, shows normal transistor characteristics, which essentially remains the same after one hour of tensile stress.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A flexible hydrogen gas sensor based on pentacene organic thin-film transistor (OTFT) using palladium (Pd) source and drain (S/D) electrodes as the sensing medium is prepared on adhesive vacuum tape. The sensor exhibits a clear, rapid and concentration-dependent response upon hydrogen exposure without the need of heating. In addition, in order to demonstrate the flexibility of the sensor, measurements on a curved surface are performed. The sensor, when attached to the curved surface, shows normal transistor characteristics, which essentially remains the same after one hour of tensile stress.