2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations

Abstract

In this paper the possibilities for quantitative determination of 2D dope profiles in advanced CMOS technologies are investigated using selective etching in combination with TEM, SIMS and AFM. Promising results were obtained for As. For B an etch-rate dependence on the steepness of the B concentration gradient and influence of the background channel doping (As and P) seem to trouble quantification. A comparison between the measured and simulated (TSUPREM4) 2D profile of a 0.18μm NMOST is presented.