Back-End-of-Line-Compatible Anneal-Free Ferroelectric Field-Effect Transistor

Abstract

In this work, we develop an anneal-free back-end-of-line (BEOL) process for ferroelectric hafnium zirconium oxide (HZO)/indium gallium zinc oxide (IGZO)-based ferroelectric field-effect transistor (FeFET), suitable for in-memory computing. The novel anneal-free BEOL FeFET presented in this work stunningly achieves a competitive performance under a record-low thermal budget. Ultra-low subthreshold swing (SS) of 66.2 mV/dec, large on/off current ratio $(\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}})$ of $> 10^{7}$, large memory window (MW) of $> 1.7$ V, high endurance of $> 10^{7}$ cycles without significant degradation are obtained.