Fabrication of gated field emitter from wedge array prepared by stamp technology

A. Baba, K. Tsubaki, M. Iwamoto, T. Asano
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Abstract

Ion-beam modified polyimide is very attractive material for use in field emitters because it can emit electrons at relatively low electric fields with a stable emission rate. The use of organic material as the starting material makes it possible to prepare emitter arrays using the stamp technology. The stamp technology is able to prepare uniform emitter arrays with high geometrical accuracy. In the previous study, a long wedge-type emitter array has been fabricated using the stamp technology. In order to increase emission current density and decrease operating voltage, it highly required to shorten the length of the wedge and to fabricate gated device structure. In this work, we demonstrate successful preparation of short-wedge emitter arrays using a modified stamp process. Fabrication of the gated field emitter arrays from the short-wedge emitters is also demonstrated.
用冲压技术制备楔形阵列的门控场发射极
离子束修饰聚酰亚胺可以在相对较低的电场下以稳定的发射速率发射电子,是一种非常有吸引力的场发射材料。有机材料作为起始材料的使用,使得利用冲压技术制备发射极阵列成为可能。该技术能够制备几何精度高的均匀射极阵列。在前人的研究中,利用脉冲技术制备了一种长楔型发射极阵列。为了提高发射电流密度和降低工作电压,需要缩短楔形长度和制作门控器件结构。在这项工作中,我们展示了使用改进的冲压工艺成功制备短楔形发射极阵列。本文还演示了利用短楔形发射极制造门控场发射极阵列的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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