Transport Properties and Device Performance of Quasi-One-Dimensional MoS2 FETs

Abstract

We investigated the bandstructure, transport and device properties of semiconducting MoS2 nanoribbons (MoS2NR) with hybrid OH-passivated armchair edges using orbitally-resolved ab initio Hamiltonians and quantum transport simulations based on Green’s functions. The impact of MoS2NR width scaling on the bandstructure, transmission, bandgap, injection velocity, charge density and ON-state current are analyzed in detail using the ballistic FET model. We find that sub-3 nm-wide and $\sim$15 nm-long MoS2NR FETs offer low driving currents under 0.43 mA/$\mu$m for nFETs and under 0.6 mA/$\mu$m for pFETs. Moreover, the current is only weakly modulated by nanoribbon width downscaling due to immunity of the MoS2NR bandstructure to quantum confinement effects.