Low Power, Low Chip Area, Programmable PID Controller Realized in the CMOS Technology

T. Talaśka, R. Dlugosz
{"title":"Low Power, Low Chip Area, Programmable PID Controller Realized in the CMOS Technology","authors":"T. Talaśka, R. Dlugosz","doi":"10.23919/MIXDES.2018.8436634","DOIUrl":null,"url":null,"abstract":"The subject of the proposed paper is a novel, transistor level implementation (in the CMOS technology) of a programmable PID (proportional-integral-derivative) controller. In our work we focus on a discrete-time digital approach, as it facilities realization of a programmable structure which is more flexible. The novelty of the proposed solution relies on implementing the PID controller as a parallel and asynchronous structure, controlled by a simple 2-phases clock. Each of the P, I and D parts is realized as a separate channel with an own multi-bit multiplier, a summing circuit and a delay line (in the I and the D parts). The multiplier is realized as a binary tree circuit that works fully asynchronously. The implementation in the CMOS technology allows to obtain a small structure. For the input signals, and the coefficients of the PID controller encoded on 8-bits the total number of transistors does not exceed 13000. In the CMOS 180 nm technology the chip area approximately equals 0.15 mm2. Data rate is in this case even as high as 200–330 MHz, depending on the temperature and supply voltage, at very low power dissipation not exceeding 1 mW. Such a solution is suitable for various microsystems and embedded systems (used for example in automotive applications) in which small sizes and high data rate become very important features.","PeriodicalId":349007,"journal":{"name":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2018.8436634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The subject of the proposed paper is a novel, transistor level implementation (in the CMOS technology) of a programmable PID (proportional-integral-derivative) controller. In our work we focus on a discrete-time digital approach, as it facilities realization of a programmable structure which is more flexible. The novelty of the proposed solution relies on implementing the PID controller as a parallel and asynchronous structure, controlled by a simple 2-phases clock. Each of the P, I and D parts is realized as a separate channel with an own multi-bit multiplier, a summing circuit and a delay line (in the I and the D parts). The multiplier is realized as a binary tree circuit that works fully asynchronously. The implementation in the CMOS technology allows to obtain a small structure. For the input signals, and the coefficients of the PID controller encoded on 8-bits the total number of transistors does not exceed 13000. In the CMOS 180 nm technology the chip area approximately equals 0.15 mm2. Data rate is in this case even as high as 200–330 MHz, depending on the temperature and supply voltage, at very low power dissipation not exceeding 1 mW. Such a solution is suitable for various microsystems and embedded systems (used for example in automotive applications) in which small sizes and high data rate become very important features.
用CMOS技术实现的低功耗、低片面积、可编程PID控制器
本文的主题是一种新颖的晶体管级实现(在CMOS技术中)可编程PID(比例-积分-导数)控制器。在我们的工作中,我们专注于离散时间数字方法,因为它有助于实现更灵活的可编程结构。所提出的解决方案的新颖性依赖于将PID控制器实现为并行和异步结构,由简单的两相时钟控制。每个P, I和D部分都实现为一个独立的通道,具有自己的多位乘法器,求和电路和延迟线(在I和D部分)。该乘法器是一个完全异步工作的二叉树电路。在CMOS技术中的实现允许获得一个小的结构。对于输入信号,以及8位编码的PID控制器系数,晶体管总数不超过13000个。在CMOS 180纳米技术中,芯片面积大约等于0.15 mm2。在这种情况下,根据温度和电源电压的不同,数据速率甚至高达200-330 MHz,功耗不超过1 mW。这种解决方案适用于各种微系统和嵌入式系统(例如在汽车应用中使用),其中小尺寸和高数据速率是非常重要的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信