Thermal Characteristics of ESD Diode in FDSOI Technologies

Abstract

Electrostatic discharge (ESD) protection is very important for integrated circuits. In the fully depleted silicon on insulator (FDSOI) technology, the buried oxide (BOX) caused thermal degradation is one of the factors that degrade the intrinsic ESD robustness. In this work, the thermal characteristic of FDSOI ESD diode is investigated by TCAD simulations. The results show that the reduction in BOX thickness and material optimization can improve the heat dissipation and device’s ESD performance.