1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances

Abstract

H-SiC{0001} RESURF MOSFETs with a two-zone structure have been simulated and fabricated. The dose dependencies of experimental breakdown voltage show good agreement with simulation. Through the optimization of implant dose, high-temperature (1700 o C) annealing after ion implantation, and reduction of channel length, a high breakdown voltage of 1330 V and a low on-resistance of 69 m: cm 2 have been obtained. The 4H-SiC(000-1) face is promising for MOS-based devices owing to superior quality of MOS interface, and a performance of 1260 V - 62 m: cm 2 has been achieved. The figure-of-merit (VB 2 /Ron) of the present devices reaches 26 MW/cm 2 , being the best performance among lateral SiC MOSFETs reported.