Lot-to-Lot Variability and TID degradation of Bipolar Transistors Analyzed with ESA and PRECEDER Databases

Abstract

The NewSpace era has drastically increased the use of COTS (Commercial-off-the-shelf Components) to cover the needs of the new requirements: lower costs, shorter lead times, and better performances. However, the radiation risks associated with non-radiation hardened components are especially relevant in this context. Therefore, new approaches must be considered necessary to address this challenge for the assurance of radiation hardness. This work presents standard and parameterized radiation databases and how they can be used to numerically assess the critical variability from lot to lot in response to gamma radiation based on the coefficient of variation.