Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser
{"title":"Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser","authors":"Mai Lien Thi Kieu, S. Horita","doi":"10.1109/AM-FPD.2015.7173249","DOIUrl":null,"url":null,"abstract":"Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2015.7173249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.