Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser

Mai Lien Thi Kieu, S. Horita
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Abstract

Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.
脉冲激光两步辐照法在YSZ晶化感应层上生长的未掺杂和掺杂多si薄膜电导率的温度依赖性
用脉冲激光两步法研究了有/没有YSZ层的硅薄膜固相结晶的电导率。用交流霍尔效应测量方法测量了未掺杂和掺p薄膜的温度依赖性。结果表明,Si/YSZ/玻璃结构的电导率高于Si/玻璃结构。这表明在YSZ层上结晶的Si膜比在玻璃上结晶的Si膜更适合于电子器件的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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