Integration of silicon photonics in bulk CMOS

Roy Meade, J. Orcutt, K. Mehta, Ofer Tehar-Zahav, Daniel L. Miller, M. Georgas, B. Moss, Chen Sun, Yu-hsin Chen, J. Shainline, M. Wade, R. Bafrali, Zvi Sternberg, G. Machavariani, G. Sandhu, M. Popović, Rajeev J Ram, V. Stojanović
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引用次数: 20

Abstract

The first monolithic process flow integrating silicon photonics on operational bulk CMOS has been developed. Features include deep-trench isolation, polysilicon waveguides, grating couplers, filters, modulators, and detectors. Fully functional on-chip CMOS enables Tx/Rx operation while minimizing interconnect parasitics. With the addition of an external 1280nm source, a fully functional optical link (5Gb/s 2.8pJ/b), capable of wavelength division multiplexing, has been demonstrated. In addition to the polysilicon resonant detector used in the link, a monolithically-integrated Silicon-Germanium selective epitaxial growth based photodetector was developed.
硅光子学在体CMOS中的集成
第一个将硅光子学集成到可操作的大块CMOS上的单片工艺流程已经开发出来。特点包括深沟隔离,多晶硅波导,光栅耦合器,滤波器,调制器和探测器。功能齐全的片上CMOS可实现Tx/Rx操作,同时最大限度地减少互连寄生。通过增加外部1280nm光源,实现了具有5Gb/s 2.8pJ/b的全功能光链路,能够实现波分复用。除了用于链路的多晶硅谐振探测器外,还开发了基于单片集成硅锗选择性外延生长的光电探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
3.40
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