Lasing and light amplification in photonic crystal heterostructures

Abstract

Properties of one-dimensional heterostructures having a photonic band gap in the near infrared range are examined and novel photonic crystals with n-i-p-i superlattices in the GaAs-Ga/sub x/In/sub 1-x/P system are designed. Performance characteristics of the photonic crystal heterostructures are calculated and effects of gain saturation in the active n-i-p-i layers are investigated. Light amplification at the transmission and reflection in the photonic band gap region is analyzed and peculiarities of the emission at the defect mode are established.