GaN-HEMTs devices with single- and double-heterostructure for power switching applications

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6531983

G. Meneghesso, A. Zanandrea, A. Stocco, I. Rossetto, C. de Santi, F. Rampazzo, M. Meneghini, E. Zanoni, Eldad Bahat Treidel, O. Hilt, P. Ivo, J. Wuerfl

引用次数: 8

Abstract

We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures.

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用于功率开关应用的单双异质gan - hemt器件

我们报道了基于氮化镓的单(SH)和双异质结构(DH) hemt的广泛研究，用于功率开关应用。分析是基于直流，脉冲和击穿的测量，进行了五种不同的外延结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Reliability Physics Symposium (IRPS)

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