Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Abstract

Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (<; 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.