Low-Power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator

M. Rakowski, J. Ryckaert, M. Pantouvaki, Hui Yu, W. Bogaerts, K. Meyer, M. Steyaert, P. Absil, J. Campenhout
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引用次数: 12

Abstract

We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5Vpp from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1Vpp and 1.5Vpp respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively.
用于硅电光环调制器的低功耗,10gbps 1.5 vpp差分CMOS驱动器
我们提出了一种新颖的驱动电路,使电光调制具有高消光比,从一个共同设计的硅环调制器。驱动电路提供10Gbps的非对称差分输出,电压摆幅可达1.5Vpp,最大限度地提高了耗尽型环形调制器的谐振波长位移,同时避免了载流子注入。采用40nm CMOS工艺制作了包含4个可重构驱动电路的测试芯片。在1Vpp和1.5Vpp下,驱动100fF容性负载的实测能耗分别低至125fJ/bit和220fJ/bit。在硅光子学芯片上集成环形调制器后,功耗分别为210fJ/bit和350fJ/bit。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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