M. Rakowski, J. Ryckaert, M. Pantouvaki, Hui Yu, W. Bogaerts, K. Meyer, M. Steyaert, P. Absil, J. Campenhout
{"title":"Low-Power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator","authors":"M. Rakowski, J. Ryckaert, M. Pantouvaki, Hui Yu, W. Bogaerts, K. Meyer, M. Steyaert, P. Absil, J. Campenhout","doi":"10.1109/CICC.2012.6330643","DOIUrl":null,"url":null,"abstract":"We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5Vpp from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1Vpp and 1.5Vpp respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2012.6330643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5Vpp from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1Vpp and 1.5Vpp respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively.