An 800MS/s, 6.7b ENOB Bootstrap Switching S/H IC for Wideband Direct RF Sub-Sampling Receiver in 45 nm CMOS

Shuai Liu, Rui Yin, Hao Xu, Xiaoliang Shen, Na Yan
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Abstract

Direct sampling RF receivers have become widely used in modern communication systems due to its agile operation. However, the sampling speed of the existing ADC can’t meet the requirements of direct sampling of RF signals. The application of sub-sampling technology is inevitable. The noise aliasing in the sub-sampling receiver puts forward higher requirements on the performance of the sampling and holding circuit. In this paper, we demonstrated a wideband S/H circuit for direct sub-sampling receiver in 45nm CMOS process. Bootstrap technology has been applied to improve SNDR performance by controlling the most important distortion source. With 800MHz sampling rate, the post-layout simulated results show that |S11| is lower than -30dB. The signal-to-noise and distortion ratio (SNDR) is higher than 42.33dB. The spurious-free dynamic range (SFDR) is higher than 45.06dB.
一种用于45纳米CMOS宽带直接射频子采样接收器的800MS/s, 6.7b ENOB自举开关s /H IC
直接采样射频接收机由于其操作灵活,在现代通信系统中得到了广泛的应用。但是,现有ADC的采样速度不能满足对射频信号直接采样的要求。分采样技术的应用是必然的。子采样接收机中的噪声混叠对采样保持电路的性能提出了更高的要求。在本文中,我们展示了一种用于45nm CMOS工艺的直接子采样接收器的宽带S/H电路。自举技术已被应用于通过控制最重要的失真源来提高SNDR性能。在800MHz采样率下,布局后的仿真结果表明,|S11|小于-30dB。信噪比和失真比(SNDR)均高于42.33dB。无杂散动态范围(SFDR)大于45.06dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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