{"title":"A 0.1% accuracy 100/spl Omega/-20M/spl Omega/ dynamic range integrated gas sensor interface circuit with 13+4 bit digital output","authors":"M. Grassi, P. Malcovati, A. Baschirotto","doi":"10.1109/ESSCIR.2005.1541632","DOIUrl":null,"url":null,"abstract":"This paper presents the design and the characterization of an integrated wide-range interface circuit for resistive sensors. The device is actually a multi-scale transresistance continuous time amplifier followed by a 13-bit incremental A/D converter. As shown in measurements the worst case resolution is near to 0.1% over a range of 5.3 decades [100/spl Omega/-20M/spl Omega/] thanks to a calibration technique which cancels offset and gain error mismatch between scales. The chip has been designed in 0.35/spl mu/m CMOS technology.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
This paper presents the design and the characterization of an integrated wide-range interface circuit for resistive sensors. The device is actually a multi-scale transresistance continuous time amplifier followed by a 13-bit incremental A/D converter. As shown in measurements the worst case resolution is near to 0.1% over a range of 5.3 decades [100/spl Omega/-20M/spl Omega/] thanks to a calibration technique which cancels offset and gain error mismatch between scales. The chip has been designed in 0.35/spl mu/m CMOS technology.