A Rugged LDMOS for LBC5 Technology

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488017

P. Hower, J. Lin, S. Pendharkar, B. Hu, J. Arch, J. Smith, T. Efland

引用次数: 74

Abstract

This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications where “Electrical SOA” is important and where the power pulse time is typically a few µs or less. Typical applications include gate drives, H-bridge commutation, and self-protection against ESD pulses.

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基于LBC5技术的坚固型LDMOS

提出了一种提高n沟道Ldmos晶体管SOA性能的新方法。人们的注意力集中在那些“电气SOA”很重要的应用上，这些应用的功率脉冲时间通常是几µs或更少。典型应用包括栅极驱动、h桥整流和ESD脉冲自我保护。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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