An investigation of deep electron trap at the different insulator-phosphor interfaces in ZnS:TbOF ACTFEL devices

Abstract

Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta/sub 2/O/sub 5//ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO/sub 2//ZnS:TbOF.