The design of short wavelength light emitting diodes

2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI:10.1109/ICOOM.2012.6316235

Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han

引用次数: 0

Abstract

We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.

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短波长发光二极管的设计

我们展示了基于algan的极短波长的多量子阱发光二极管的结构。利用APSYS软件进行仿真，可以达到280nm的波长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 International Conference on Optoelectronics and Microelectronics

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