NanoBridge Technology for Embedded Novolatile Memory Application

Abstract

NanoBridge (NB) is a kind of electrochemical resistive-change device using Cu ion migration from Cu interconnects into electrolyte. NBs are integrated by only two additional masks in a standard Cu-BEOL without scarifying CMOS performance. The newly developed split Cu electrode enables the lower set voltage (2.2V) and superior retention, which have been demonstrated in a 28 nm-node. High density embedded nonvolatile NB memory macro in a 65nm technology is successfully developed with $\mathrm{P}/\mathrm{E}=30\text{ns}/30\text{ns}$ programming based on the highly reliable and low-cost manufacturable NB technology. High yield is achieved with satisfying 30ns read, and more than 10 years retention at 150°C. NB properties can be systematically adjusted by tailoring the NB stack, achieving to broaden NB applications.