High Precision Measurement of Sub-Nano Ampere Current in ATE Environment

Keno Sato, Takayuki Nakatani, Takashi Ishida, Toshiyuki Okamoto, Tamotsu Ichikawa, Shogo Katayama, Gaku Ogihara, Daisuke Iimori, Yujie Zhao, Jianglin Wei, A. Kuwana, K. Hatayama, Haruo Kobayashi
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Abstract

Background: In IoT system devices, currents become smaller and they have to operate for ten years with a coin cell battery. Then their accurate and fast measurement is required at the mass production shipping stage. However, the conventional method needs a large resistor (Rm, MΩ-order in Fig. 1) which makes the testing slow, and the ATE environment is noisy.Research Target: Our target is the development of a testing technique to measure the current in the order of nano or sub-nano ampere with high linearity in the noisy ATE environment and in short time as well as with only additional low cost built-out self-test (BOST) circuits.Approach: Fig. 2 shows the proposed current measurement circuits. The current under test is converted to the voltage through an op-amp and a resistor Rm of 10kΩ, and it is then converted to the AC voltage; these conversions are done with small BOST circuits. The AC voltage is amplified and converted to the digital signal through an AC amp, a sample/hold circuit and an ADC. FFT is performed and its power spectrum is calculated; the input current value is obtained. The resistor (Rm) of 10k generates spike noises which are spurious components in the power spectrum. However, usage of the sample/hold circuit reduces their effects. Thanks to the DC-AC conversion, the measurement accuracy is not degraded by the system noise in the low frequency region. The nano-ampere current and the resistor of 10kΩ produces several tens μV level voltage and our previous research in [1, 2] shows that the DC-AC conversion method can measure this level of the voltage accurately and in short time. Also, its multi-channel measurement is possible.Experiment Verification: Preliminary experiment with the prototype system in Fig. 2 was performed and its measured result is shown in Fig. 3. The measurement circuit gain in Fig. 2 was calibrated with 1.0nA input current (Iin), which corresponds to Vin of 10.0μV. Also an offset of 0.2μV due to electromotive force (EMF) was calibrated. We see in Fig. 3 that the proposed method can measure the current as low as 50pA. So far EMF limits the lowest measurable current. Fig. 4 shows 100 times of measurements for 1.0nA without averaging. Each measured current value is obtained by 1K-point FFT with 25.6 ksps, 16-bit ADC (myDAQ) usage and the measurement time of 40ms. The measured data is within 0.94nA to 1.07nA; the variation range is 0.13nAp−p.Conclusion: A method of fast and accurate current measurement as low as 50pA using IV conversion and DC-AC conversion in ATE environment has been developed.
亚纳米安培电流在ATE环境下的高精度测量
背景:在物联网系统设备中,电流变得越来越小,它们必须使用硬币电池运行十年。在批量生产运输阶段,需要对其进行准确、快速的测量。然而,传统方法需要一个大的电阻(图1中的Rm, MΩ-order),这使得测试速度慢,并且ATE环境有噪声。研究目标:我们的目标是开发一种测试技术,在嘈杂的ATE环境中,在短时间内以高线性度测量纳米或亚纳米安培数量级的电流,并且只需要额外的低成本内置自检(BOST)电路。方法:图2显示了提出的电流测量电路。被测电流通过运算放大器和电阻Rm 10kΩ转换为电压,然后转换为交流电压;这些转换是用小的BOST电路完成的。交流电压通过交流放大器、采样/保持电路和ADC被放大并转换为数字信号。进行FFT并计算其功率谱;得到输入电流值。10k的电阻Rm产生的尖峰噪声是功率谱中的杂散分量。然而,采样/保持电路的使用降低了它们的影响。由于采用直流-交流转换,测量精度不受低频区系统噪声的影响。纳米安培电流与10kΩ电阻器产生几十μV级别的电压,我们在[1,2]中的研究表明,直流-交流转换方法可以在短时间内准确测量出这一级别的电压。此外,它的多通道测量是可能的。实验验证:对图2中的原型系统进行了初步实验,测量结果如图3所示。图2中的测量电路增益以1.0nA的输入电流(Iin)进行校准,对应的Vin为10.0μV。对电动势(EMF)造成的0.2μV偏置进行了标定。从图3中可以看出,本文提出的方法可以测量低至50pA的电流。到目前为止,EMF限制了最低可测量电流。图4显示了在1.0nA条件下不取平均值的100次测量。每个测量电流值由k点FFT以25.6 ksps, 16位ADC (myDAQ)使用,测量时间为40ms获得。实测数据在0.94nA ~ 1.07nA范围内;变化范围为0.13nAp−p。结论:建立了一种在ATE环境下利用IV转换和DC-AC转换进行低至50pA的快速、准确电流测量的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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