G. Piazza, P. Stephanou, J. Black, R. White, A. Pisano
{"title":"Single-chip multiple-frequency RF microresonators based on aluminum nitride contour-mode and FBAR technologies","authors":"G. Piazza, P. Stephanou, J. Black, R. White, A. Pisano","doi":"10.1109/ULTSYM.2005.1603063","DOIUrl":null,"url":null,"abstract":"This work reports experimental results on a new class of multiple-frequency contour-mode bulk acoustic wave aluminum nitride resonators that were co-fabricated on the same silicon chip with suspended thin film bulk acoustic resonators (FBAR). The novel contour-mode technology combined with FBAR resonators permit the fabrication of integrated single-chip RF platforms that can cover IF and RF frequencies of particular interest to the handset market. High Q ranging from 2,000 to 4,000 were demonstrated for rectangular and ring shaped contour-mode resonators in air at frequencies as high as 473 MHz. FBAR resonators with Q of 2,000 at 1.75 GHz were fabricated on the same substrate. To further prove the contour-mode technology, ladder filters at 93 and 236 MHz were demonstrated with insertion losses of 4 and 8 dB, respectively, 3 dB bandwidth of 0.3 % and high out-of-band rejection (larger than 26 dB). In addition a low phase noise (less than - 110 dBc/Hz at 10 kHz offset) oscillator was realized using a 224 MHz ring resonator in a standard pierce design.","PeriodicalId":302030,"journal":{"name":"IEEE Ultrasonics Symposium, 2005.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Ultrasonics Symposium, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2005.1603063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
This work reports experimental results on a new class of multiple-frequency contour-mode bulk acoustic wave aluminum nitride resonators that were co-fabricated on the same silicon chip with suspended thin film bulk acoustic resonators (FBAR). The novel contour-mode technology combined with FBAR resonators permit the fabrication of integrated single-chip RF platforms that can cover IF and RF frequencies of particular interest to the handset market. High Q ranging from 2,000 to 4,000 were demonstrated for rectangular and ring shaped contour-mode resonators in air at frequencies as high as 473 MHz. FBAR resonators with Q of 2,000 at 1.75 GHz were fabricated on the same substrate. To further prove the contour-mode technology, ladder filters at 93 and 236 MHz were demonstrated with insertion losses of 4 and 8 dB, respectively, 3 dB bandwidth of 0.3 % and high out-of-band rejection (larger than 26 dB). In addition a low phase noise (less than - 110 dBc/Hz at 10 kHz offset) oscillator was realized using a 224 MHz ring resonator in a standard pierce design.