Single-chip multiple-frequency RF microresonators based on aluminum nitride contour-mode and FBAR technologies

G. Piazza, P. Stephanou, J. Black, R. White, A. Pisano
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引用次数: 17

Abstract

This work reports experimental results on a new class of multiple-frequency contour-mode bulk acoustic wave aluminum nitride resonators that were co-fabricated on the same silicon chip with suspended thin film bulk acoustic resonators (FBAR). The novel contour-mode technology combined with FBAR resonators permit the fabrication of integrated single-chip RF platforms that can cover IF and RF frequencies of particular interest to the handset market. High Q ranging from 2,000 to 4,000 were demonstrated for rectangular and ring shaped contour-mode resonators in air at frequencies as high as 473 MHz. FBAR resonators with Q of 2,000 at 1.75 GHz were fabricated on the same substrate. To further prove the contour-mode technology, ladder filters at 93 and 236 MHz were demonstrated with insertion losses of 4 and 8 dB, respectively, 3 dB bandwidth of 0.3 % and high out-of-band rejection (larger than 26 dB). In addition a low phase noise (less than - 110 dBc/Hz at 10 kHz offset) oscillator was realized using a 224 MHz ring resonator in a standard pierce design.
基于氮化铝轮廓模和FBAR技术的单片多频射频微谐振器
本文报道了一种新型的多频轮廓模体声波氮化铝谐振器的实验结果,该谐振器与悬浮薄膜体声波谐振器(FBAR)在同一硅片上共同制造。新颖的轮廓模式技术与FBAR谐振器相结合,允许制造集成的单芯片射频平台,可以覆盖手机市场特别感兴趣的中频和射频频率。在高达473 MHz的频率下,空气中的矩形和环形轮廓模谐振器的高Q值范围为2000至4000。在同一衬底上制备了1.75 GHz频率下Q值为2000的FBAR谐振器。为了进一步证明轮廓模式技术,93和236 MHz的阶梯滤波器分别具有4和8 dB的插入损耗,0.3%的3 dB带宽和高带外抑制(大于26 dB)。此外,在标准的穿孔设计中,使用224 MHz环形谐振器实现了低相位噪声(在10 kHz偏移时小于- 110 dBc/Hz)振荡器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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