A 5.35 mW 10 MHz bandwidth CT third-order ΔΣ modulator with single Opamp achieving 79.6/84.5 dB SNDR/DR in 65 nm CMOS

Wei Wang, Yan Zhu, Chi-Hang Chan, U. Seng-Pan, R. Martins
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引用次数: 4

Abstract

This paper presents a power-efficient single-loop continuous-time (CT) third-order sigma delta (ΔΣ) modulator that achieves a SNDR of 79.6 dB over a 10 MHz signal bandwidth. The modulator uses a feedforward-feedback (CIFF-FB) architecture which incorporates a single amplifier biquad (SAB) and a passive integrator to realize a third-order noise shaping. We also propose a continuous-time complementary (CTC) approach for the amplifier to improve the power efficiency. To alleviate the switch driver mismatch and jitter, we introduce an adaptive latch in the DAC driver. The modulator operates at a sampling rate of 640 MHz and consumes 5.35 mW from 1.2 V and 1.8 V power supplies. It achieves a DR of 84.5 dB and a SNDR of 79.6 dB with 10 MHz signal bandwidth, resulting in a Schreier FOM of 172.3 dB or 177.2 dB based on SNDR or DR, respectively.
5.35 mW 10 MHz带宽CT三阶ΔΣ单运放调制器,在65 nm CMOS中实现79.6/84.5 dB SNDR/DR
本文提出了一种节能的单回路连续时间(CT)三阶σ δ (ΔΣ)调制器,在10mhz信号带宽上实现了79.6 dB的SNDR。该调制器采用前馈-反馈(CIFF-FB)结构,该结构结合了一个单放大器四极体(SAB)和一个无源积分器来实现三阶噪声整形。我们还提出了一种连续时间互补(CTC)方法来提高放大器的功率效率。为了减轻开关驱动不匹配和抖动,我们在DAC驱动中引入了自适应锁存器。该调制器以640 MHz的采样率工作,从1.2 V和1.8 V电源消耗5.35 mW。在10mhz的信号带宽下,DR为84.5 dB, SNDR为79.6 dB,基于SNDR和DR的Schreier FOM分别为172.3 dB和177.2 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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