A radio frequency MOSFET driver

Abstract

High power MOSFETs have become synonymous with power electronics applications. The ability of high power MOSFETs to act as a switch makes it the ideal switching device, where maximum voltage and zero current must occur when the device is open. When closed, the MOSFET must allow maximum current to flow with zero voltage across it. This technique of switching between maximum and zero voltage across the high power MOSFET is readily achieved at frequencies below 1 MHz. Raising the frequency to within the radio frequency range has often proved a problem since high power MOSFETs tend to have a frequency cut-off point. This paper attempts to address the switching habits and limits of high power MOSFETs within the radio frequency range by means of computer simulation and experimental verification