Hyeon-Kyeong Seong, J. Choi, Boo Sik Shin, Heung-Soo Kim
{"title":"Implementation of multiple-valued multiplier on GF(3/sup m/) using current mode CMOS","authors":"Hyeon-Kyeong Seong, J. Choi, Boo Sik Shin, Heung-Soo Kim","doi":"10.1109/ISMVL.2000.848623","DOIUrl":null,"url":null,"abstract":"The multiplication algorithm of two polynomials on finite fields GF(3/sup m/) is presented. The 3-valued multiplier of the serial-in/parallel-out modular structures on GF(3/sup 3/) to be performed on the presented multiplication algorithm is implemented by current-mode CMOS. The current-mode CMOS 3-valued multiplier is implemented two GF(3) multipliers and two GF(3) adders. Performances of the proposed circuits are evaluated using Pspice simulations with 2.0 /spl mu/m standard CMOS device parameters, 20 /spl mu/A unit current level and 3.3 V V/sub DD/ voltage supply.","PeriodicalId":334235,"journal":{"name":"Proceedings 30th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2000)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 30th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2000)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2000.848623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The multiplication algorithm of two polynomials on finite fields GF(3/sup m/) is presented. The 3-valued multiplier of the serial-in/parallel-out modular structures on GF(3/sup 3/) to be performed on the presented multiplication algorithm is implemented by current-mode CMOS. The current-mode CMOS 3-valued multiplier is implemented two GF(3) multipliers and two GF(3) adders. Performances of the proposed circuits are evaluated using Pspice simulations with 2.0 /spl mu/m standard CMOS device parameters, 20 /spl mu/A unit current level and 3.3 V V/sub DD/ voltage supply.