Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction

Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim
{"title":"Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction","authors":"Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim","doi":"10.1109/IEDM45625.2022.10019539","DOIUrl":null,"url":null,"abstract":"In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM45625.2022.10019539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.
高可靠的物理不可克隆功能与隧道传导忆阻交叉棒
在这项工作中,我们提出了使用al2o3 /TiOx记忆电阻交叉棒阵列的原始状态的高可靠的物理不可克隆函数(PUF)操作。该器件堆栈在化学计量学和厚度方面进行了优化,以获得与温度无关的$I-V$性质。基于交叉条证明了一个具有大$(\sim 10 ^{17})$挑战响应对数的强PUF,并且由于隧道传导,在不采用校正方法的情况下,实验验证了误码率(BER)小于1%(80°C时为0.896%)。此外,PUF的均匀性、扩散性和唯一性得到了50%的评价,并通过NIST测试和机器学习攻击验证了其随机性,验证了PUF的鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信