Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim
{"title":"Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction","authors":"Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, M. Song, S. Youn, Kyungho Hong, Byung-Gook Park, Hyungjin Kim","doi":"10.1109/IEDM45625.2022.10019539","DOIUrl":null,"url":null,"abstract":"In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM45625.2022.10019539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we present highly reliable operations of physical unclonable function (PUF) using the pristine state of Al2 O3/TiOx memristor crossbar arrays. The device stack is optimized in terms of stoichiometry and thickness to obtain temperature-independent $I-V$ properties. A strong PUF with a large $(\sim 10 ^{17})$ number of challenge-response pairs is demonstrated based on the crossbars, and the bit-error rate (BER) was experimentally verified less than 1% (0.896% at 80 °C) without correction methods thanks to tunneling conduction. In addition, the uniformity, diffuseness, and uniqueness of the PUF are evaluated ~50%, and its randomness is verified through both NIST tests and machine learning attacks, confirming robust security property.