Perspective of FinFETs for analog applications

Abstract

FinFETs are known to be one of the most promising technological solutions to create high-performance ultra-scaled Si MOSFETs. In this paper, we present the first detailed experimental investigation of the analog performance of FinFETs with channel lengths down to 50 nm. We demonstrate that such devices have very strong potential for analog applications, mainly thanks to a super-high value of the Early voltage and hence intrinsic gain, which they can provide. The impact of fin width on device characteristics is also analysed. We show that the narrowest devices appear as the most promising, since they operate in the fully-depleted regime, even possibly in volume inversion.