Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA

M. Mićović, A. Kurdoghlian, T. Lee, R.O. Hiramoto, P. Hashimoto, A. Schmitz, I. Milosavljević, P. Willadsen, William S. Wong, M. Antcliffe, M. Wetzel, M. Hu, M. Delaney, D. Chow
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引用次数: 48

Abstract

We report robust GaN MMIC LNA operating over 4 GHz-6 GHz frequency range. An FET biased in common-drain configuration is used on the second stage of the MMIC to obtain good input return loss at the optimum noise match over the entire frequency range. The measured noise figure of the MMIC is less than 2 dB over the 4.5 GHz to 16 GHz frequency range and NF has a minimum of 1.45 dB at a frequency of 6.5 GHz. The MMIC gain is more than 10 dB and the input return loss of the MMIC is less than -10 dB over the 4 GHz-15 GHz frequency range. Reported MMIC can survive 5.4 W of incident RF power without front end protection. To the authors knowledge this is the best combination of the noise figure, input return loss, RF survivability and broadband response reported to date in this frequency range using GaN technology. The noise figure of the reported GaN MMIC is 0.5 dB lower than the overall noise figure of an equivalent GaAs pHEMT module consisting of the state of the art LNA and a 5 Watt power limiter at the front end.
稳健宽带(4 GHz - 16 GHz) GaN MMIC LNA
我们报告了在4 GHz-6 GHz频率范围内工作的稳健GaN MMIC LNA。在MMIC的第二级上使用了偏置共漏配置的场效应管,以在整个频率范围内获得最佳噪声匹配的良好输入回波损耗。MMIC在4.5 GHz ~ 16ghz频率范围内噪声系数小于2db, NF在6.5 GHz频率范围内噪声系数小于1.45 dB。在4ghz ~ 15ghz频率范围内,MMIC增益大于10db,输入回波损耗小于- 10db。报告的MMIC可以在没有前端保护的情况下承受5.4 W的入射射频功率。据作者所知,这是迄今为止使用GaN技术在该频率范围内报道的噪声系数、输入回波损耗、射频生存性和宽带响应的最佳组合。所报道的GaN MMIC的噪声系数比由最先进的LNA和前端5瓦功率限制器组成的等效GaAs pHEMT模块的总体噪声系数低0.5 dB。
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