A SiGe Power Amplifier With Power Detector And VSWR Protection For TD-SCDMA Application

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706571

Q. Hu, Z.H. Liu, L. Yan, W. Zhou

引用次数: 11

Abstract

This paper demonstrates a silicon-germanium (SiGe) HBT power amplifier for time division synchronous code-division multiple-access (TD-SCDMA) application with a single positive 3.3V supply and fully integrated on-chip input and interstage matching network. For the code-division multiple-access environment, the power amplifier delivers 30dBm power output and provides power-added efficiency (PAE) of 34.8% and an adjacent channel power ratio (ACPR) less than -35 dBc at 28 dBm. The power amplifier includes dynamic control bias circuits and a fully integrated power detector

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一种用于TD-SCDMA的带功率检测器和驻波保护的SiGe功率放大器

本文介绍了一种用于时分同步码分多址(TD-SCDMA)应用的硅锗(SiGe) HBT功率放大器，该功率放大器具有单正极3.3V电源和完全集成的片上输入和级间匹配网络。对于码分多址环境，功率放大器输出功率为30dBm，功率附加效率(PAE)为34.8%，相邻通道功率比(ACPR)在28dbm时小于-35 dBc。功率放大器包括动态控制偏置电路和一个完全集成的功率检测器

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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