High-Frequency Electrodynamics of Nanostructured High-TcSuperconductor Films

A. Borisenko, A. O. Pokusinskii, A. Kasatkin, A. Shapovalov, O. Boliasova
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Abstract

Theoretical model for microwave response of nanostructured high-Tcsuperconductor (HTS) film, with implanted nanoparticles of dielectric material in the films interior, is developed and the microwave surface resistance Rs(T, H, ω) is calculated both for the Meissner and mixed states of superconductor film in applied dc magnetic field. Obtained results indicate that implantation of dielectric nanoparticles or point-like radiation defects can significantly improve superconductor characteristics at microwave frequencies. Namely, these implanted nanoparticles can decrease the surface resistance in the Meissner state and eliminate Abrikosov vortices oscillations and related microwave energy losses in the mixes state of the film, thus decreasing the Abrikosov vortices contribution to the Rsvalue in the mixed state of HTS film.
纳米结构高tc超导体薄膜的高频电动力学
建立了在薄膜内部注入纳米介电物质的纳米结构高超导薄膜的微波响应理论模型,计算了超导薄膜在外加直流磁场下的迈斯纳态和混合态的微波表面电阻Rs(T, H, ω)。结果表明,注入介电纳米粒子或点状辐射缺陷可以显著改善微波频率下的超导体特性。也就是说,这些注入的纳米粒子可以降低迈斯纳状态下的表面阻力,消除薄膜混合状态下的Abrikosov涡振荡和相关的微波能量损失,从而降低Abrikosov涡对HTS薄膜混合状态下的rs值的贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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