H. Forstner, H. Knapp, H. Jager, E. Kolmhofer, J. Platz, F. Starzer, M. Treml, A. Schinko, G. Birschkus, J. Bock, K. Aufinger, R. Lachner, T. Meister, H. Schäfer, D. Lukashevich, S. Boguth, A. Fischer, F. Reininger, L. Maurer, J. Minichshofer, D. Steinbuch
{"title":"A 77GHz 4-channel automotive radar transceiver in SiGe","authors":"H. Forstner, H. Knapp, H. Jager, E. Kolmhofer, J. Platz, F. Starzer, M. Treml, A. Schinko, G. Birschkus, J. Bock, K. Aufinger, R. Lachner, T. Meister, H. Schäfer, D. Lukashevich, S. Boguth, A. Fischer, F. Reininger, L. Maurer, J. Minichshofer, D. Steinbuch","doi":"10.1109/RFIC.2008.4561425","DOIUrl":null,"url":null,"abstract":"A fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented. With a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply. The design permits FMCW operation in the 76 to 77 GHz band at chip-backside temperatures from -40degC to +125degC.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"141","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 141
Abstract
A fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented. With a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply. The design permits FMCW operation in the 76 to 77 GHz band at chip-backside temperatures from -40degC to +125degC.