Design of an ultra-low power 32-bit adder operating at subthreshold voltages in 45-nm FinFET

M. Jafari, M. Imani, Mohammad Ansari, M. Fathipour, Nader Sehatbakhsh
{"title":"Design of an ultra-low power 32-bit adder operating at subthreshold voltages in 45-nm FinFET","authors":"M. Jafari, M. Imani, Mohammad Ansari, M. Fathipour, Nader Sehatbakhsh","doi":"10.1109/DTIS.2013.6527799","DOIUrl":null,"url":null,"abstract":"This paper describes the design of an ultimately low power subthreshold 32-bit adder, implemented in 45-nm technology. Low power design is achieved by using FinFET devices which are nowadays a basic component of very scaled and low power circuits. The circuit was tested in all corners and its consumption is as low as 10fJ per computation with 0.4V supply voltage and maximum operating frequency about 260KHz. A very alluring feature of this design is that it could be speed up to 256MHz in 1.13V supply voltage and consuming only 59.05fJ energy per calculation. Another appealing feature of propose design is its stable and reliable operation with 130mV supply voltage by 3.74 KHz operation frequency. In this mode the design consumes only 43.77fW. This multi-mode design could be used in integrated circuit design which uses power management technique to reduce energy consumption by OS software job assignment. The simulations were done by HSPISE 2008.all model are extracted from FinFET 45nm PTM library.","PeriodicalId":218486,"journal":{"name":"2013 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2013.6527799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

This paper describes the design of an ultimately low power subthreshold 32-bit adder, implemented in 45-nm technology. Low power design is achieved by using FinFET devices which are nowadays a basic component of very scaled and low power circuits. The circuit was tested in all corners and its consumption is as low as 10fJ per computation with 0.4V supply voltage and maximum operating frequency about 260KHz. A very alluring feature of this design is that it could be speed up to 256MHz in 1.13V supply voltage and consuming only 59.05fJ energy per calculation. Another appealing feature of propose design is its stable and reliable operation with 130mV supply voltage by 3.74 KHz operation frequency. In this mode the design consumes only 43.77fW. This multi-mode design could be used in integrated circuit design which uses power management technique to reduce energy consumption by OS software job assignment. The simulations were done by HSPISE 2008.all model are extracted from FinFET 45nm PTM library.
45纳米FinFET超低功耗32位加法器的亚阈值电压设计
本文描述了一种最终低功耗亚阈值32位加法器的设计,采用45纳米技术实现。低功耗设计是通过使用FinFET器件来实现的,FinFET器件现在是非常规模化和低功耗电路的基本组件。电路在各个角落进行了测试,在0.4V电源电压下,最大工作频率约为260KHz,每次计算功耗低至10fJ。这个设计的一个非常诱人的特点是,它可以在1.13V的电源电压下加速到256MHz,每次计算只消耗59.05fJ的能量。本设计的另一个吸引人的特点是其工作稳定可靠,供电电压130mV,工作频率3.74 KHz。在此模式下,设计功耗仅为43.77fW。这种多模式设计可以应用于集成电路设计中,采用电源管理技术,通过操作系统软件作业分配来降低能耗。模拟由HSPISE 2008完成。所有模型均从FinFET 45nm PTM库中提取。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书