Phase Change Memory development trends

R. Bez, S. Bossi, B. Gleixner, F. Pellizzer, A. Pirovano, G. Servalli, M. Tosi
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引用次数: 11

Abstract

At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base [1]. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade.
相变存储器的发展趋势
在本世纪初,也就是2000年初,很少有人提出颠覆性技术来取代行业标准的非易失性存储器(NVM)技术,并扩大Flash应用基础[1]。一个被广泛接受的说法是,如果任何技术会成功,它将在未来十年内实现。
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