Thermal analysis of on-chip interconnects in multicore systems

Kameswar Rao Vaddina, P. Liljeberg, J. Plosila
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Abstract

As the temperature increases, interconnect delay increases due to the linear increase in electrical resistivity. This degrades the performance and shortens the interconnects life time. Package reliability will also be severely affected by the resulting thermal hotspots, thus impacting the overall performance of multicore systems. We approach this challenge by proposing to use thermal management techniques with the help of architectural thermal model of a multicore system running on a network with interconnects spawning across it. In this regard we have analysed the spatial thermal profile of the global Cu nanowire for on-chip interconnects in 65nm CMOS technology from ST microelectronics. The average temperature rise ΔT due to signaling, along the length of the conductor has been found to be around 6.8°C for a global interconnection link. The impact of this temperature rise along the interconnects has been analysed with two different signal transmission systems namely current-mode and voltage-mode signaling.
多核系统片上互连的热分析
随着温度的升高,由于电阻率的线性增加,互连延迟增加。这会降低性能并缩短互连的使用寿命。封装可靠性也将受到由此产生的热热点的严重影响,从而影响多核系统的整体性能。我们通过提出在多核系统的架构热模型的帮助下使用热管理技术来解决这一挑战,多核系统在网络上运行,相互连接在网络上产生。在这方面,我们分析了意法半导体65纳米CMOS技术芯片上互连的全球Cu纳米线的空间热分布。平均温升ΔT由于信号,沿导体的长度已被发现为6.8°C左右的全球互连链路。通过两种不同的信号传输系统,即电流模式和电压模式信号,分析了沿互连线温度升高的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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