Recent Research and Emerging Challenges in Physical Design for Manufacturability/Reliability

Chung-Wei Lin, Ming-Chao Tsai, Kuang‐Yao Lee, Tai-Chen Chen, Ting-Chi Wang, Yao-Wen Chang
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引用次数: 15

Abstract

As IC process geometries scale down to the nanometer territory, the industry faces severe challenges of manufacturing limitations. To guarantee yield and reliability, physical design for manufacturability and reliability has played a pivotal role in resolution and thus yield enhancement for the imperfect manufacturing process. In this paper, we introduce major challenges arising from nanometer process technology, survey key existing techniques for handling the challenges, and provide some future research directions in physical design for manufacturability and reliability.
可制造性/可靠性物理设计的最新研究和新挑战
随着集成电路工艺几何尺寸缩小到纳米级,该行业面临着制造限制的严峻挑战。为了保证良率和可靠性,可制造性和可靠性的物理设计在解决不完美制造工艺从而提高良率方面起着关键作用。本文介绍了纳米工艺技术面临的主要挑战,综述了应对这些挑战的现有关键技术,并提出了可制造性和可靠性物理设计的一些未来研究方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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