Performance Comparision of Mixed CNT Bundle in Global VLSI Interconnect

Nisarg D. Pandya, M. Majumder, B. Kaushik, Sanjeev Kumar Manhas
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引用次数: 10

Abstract

This paper proposes a new modeling approach for mixed carbon nano tube (CNT) bundle (MCB) interconnects. An accurate modeling hierarchy has been proposed for MCB structures. Bundled single-walled CNTs (SWNTs) and multi-walled CNTs (MWNTs) have been modeled as equivalent single conductor (ESC) transmission lines and then combined to form a MCB interconnect. This MCB interconnect is basically a multiple single conductor model. By considering different arrangements of SWNT and MWNT in mixed CNT bundle, performance is analyzed for two different MCB structures (structure1 and structure 2) in terms of propagation delay, cross talk delay and power dissipation. It has been observed that cross talk delay for structure 1 is 55.5% lesser as compared to structure 2. Consequently, power dissipation for structure 1 is also lesser with respect to structure 2.
混合碳纳米管束在全球VLSI互连中的性能比较
本文提出了一种新的混合碳纳米管(CNT)束(MCB)互连建模方法。提出了一种精确的MCB结构建模层次。捆扎的单壁CNTs (swcnts)和多壁CNTs (MWNTs)被建模为等效的单导体(ESC)传输线,然后组合形成MCB互连。这个微型断路器互连基本上是一个多单导体模型。通过考虑SWNT和MWNT在混合碳纳米管束中的不同排列方式,分析了两种不同的MCB结构(结构1和结构2)在传输延迟、串扰延迟和功耗方面的性能。观察到结构1的串扰延迟比结构2小55.5%。因此,结构1的功耗相对于结构2也较小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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