T. Hamamoto, Y. Minami, T. Shino, A. Sakamoto, T. Higashi, N. Kusunoki, K. Fujita, K. Hatsuda, T. Ohsawa, N. Aoki, H. Tanimoto, M. Morikado, H. Nakajima, K. Inoh, A. Nitayama
{"title":"A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications","authors":"T. Hamamoto, Y. Minami, T. Shino, A. Sakamoto, T. Higashi, N. Kusunoki, K. Fujita, K. Hatsuda, T. Ohsawa, N. Aoki, H. Tanimoto, M. Morikado, H. Nakajima, K. Inoh, A. Nitayama","doi":"10.1109/ICICDT.2006.220785","DOIUrl":null,"url":null,"abstract":"Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed","PeriodicalId":447050,"journal":{"name":"2006 IEEE International Conference on IC Design and Technology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on IC Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2006.220785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed