High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter

Abstract

In this work, we introduce a high-voltage, full-SiC power module based on SiC junction field effect transistors (JFETs) and schottky barrier diodes (SBDs). The process development and fabrication of 4kV SiC JFETs and SBDs are first introduced and a 3500V/15A full-SiC power module which is fabricated with self-fabricated devices is presented. The power module is also evaluated in a high frequency boost converter and demonstrates that it is capable of working at a frequency up to 100kHz and a DC voltage of 1500V. Both turn-on and turn-off times are less than 150ns. A high converter efficiency of 97% is obtained at 50kHz switching frequency and it drops to 95% at 100kHz. This work shows that SiC JFET power module is capable of high frequency and high efficiency applications in the medium voltage range.