Characterization of Cu extrusion failure mode in dual-damascene Cu/low-k interconnects under electromigration reliability test

Jeung-Woo Kim, Won-sang Song, Sam-Young Kim, Hyan-Soo Kim, Hyungoo Jeon, Chae-Bog Lim
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引用次数: 6

Abstract

With low electrical resistivity and superb electromigration properties relative to Al, Cu is considered an exemplary candidate for metallization in logic devices. The electromigration characteristics, however, are highly contingent upon the test criteria, which in turn vary with the test structure and/or materials, e.g. inter/intra-metal dielectrics. The thermal mismatch stress existing between low-k SiOF and Cu, for instance, degrades the metal adhesion and curtails the device lifetime (Riedel, 1997). Such deleterious stress may also induce an extrusion mode failure, resulting in an unstable EM data with high sigma (Ennis, 2000) and an improper estimation of via lifetime. In this study, we identify a few pertinent factors involved in the formation of Cu extrusion mode failures in a Cu-SiOF dual damascene structure, and propose a possible underlying mechanism. Extrusion-free specimens, i.e. once the problem is eliminated, show an activation energy of about 0.81 eV, and the EM failures are limited to the via regions.
电迁移可靠性试验下双damascene Cu/low-k互连铜挤压失效模式表征
相对于铝,铜具有低电阻率和极好的电迁移特性,被认为是逻辑器件中金属化的典型候选者。然而,电迁移特性在很大程度上取决于测试标准,而测试标准又随测试结构和/或材料而变化,例如金属间/金属内介电体。例如,存在于低钾SiOF和Cu之间的热失配应力降低了金属的附着力并缩短了器件的使用寿命(Riedel, 1997)。这种有害的应力也可能诱发挤压模式失效,导致高西格玛的不稳定电磁数据(Ennis, 2000)和对管道寿命的不正确估计。在本研究中,我们确定了Cu- siof双damascene结构中Cu挤压模式失效形成的几个相关因素,并提出了可能的潜在机制。无挤压试样,即一旦问题消除,显示出约0.81 eV的活化能,并且电磁失效仅限于通孔区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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