The reliability of multilevel analog memory in a voice storage and playback system using source-side injection flash

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786051

A.V. Kordesch, S. Awsare, J. Brennan, P. Guo, M. Hemming, M. Herman, P. Holzmann, E. Ng, Chun-Mai Liu, K. Su, C. Wang, M. Wu

引用次数: 2

Abstract

The reliability of a multilevel analog memory is mainly determined by data retention, cycling endurance, and read and write disturb. This storage system retains a voice message for 10 years and can record continuously for 50 K cycles. It can tolerate up to 300 single cell retention shifts >50 mV and still meet THD<0.5% and SINAD>32 dB.

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基于源侧注入闪存的语音存储与回放系统中多电平模拟存储器的可靠性

多电平模拟存储器的可靠性主要取决于数据保留、循环寿命和读写干扰。该存储系统可保留语音信息10年，并可连续录制50k周期。它可以承受高达300个>50 mV的单细胞保留位移，并且仍然满足THD32 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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