Analysis of heavily doped semiconductors

Abstract

An accurate determination of an integral appearing in Kane's expression for the density of states is presented. Expressions of this approach are compared with other existing approximations. Mock's model for total density of states is applied to illustrate possibilities of proposed derivations. An efficient algorithm for analysis of highly doped semiconductor material properties with Kane-related models is introduced. Calculated dependence of the pn product and screening length vs. doping is given.<>